Single event transient propagation in dynamic complementary metal oxide semiconductor cascade circuits

Vertically integrated, three-dimensional nanowire complementary metal-oxide-semiconductor circuits.

Three-dimensional (3D), multi-transistor-layer, integrated circuits represent an important technological pursuit promising advantages in integration density, operation speed, and power consumption compared with 2D circuits. We report fully functional, 3D integrated complementary metal-oxide-semiconductor (CMOS) circuits based on separate interconnected layers of high-mobility n-type indium arse...

Single-photon imaging in complementary metal oxide semiconductor processes

This paper describes the basics of single-photon counting in complementary metal oxide semiconductors, through single-photon avalanche diodes (SPADs), and the making of miniaturized pixels with photon-counting capability based on SPADs. Some applications, which may take advantage of SPAD image sensors, are outlined, such as fluorescence-based microscopy, three-dimensional time-of-flight imaging...

High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits.

Because of their extraordinary structural and electrical properties, two-dimensional materials are currently being pursued for applications such as thin-film transistors and integrated circuit. One of the main challenges that still needs to be overcome for these applications is the fabrication of air-stable transistors with industry-compatible complementary metal oxide semiconductor (CMOS) tech...

Flexible complementary metal oxide semiconductor microelectrode arrays with applications in single cell characterization

Single photon detector fabricated in a complementary metal–oxide–semiconductor high-voltage technology

In this article, a fully integrated single photon detector including a silicon avalanche photodiode and a quenching circuit is presented. The low doping concentrations, inherent to the complementary metal–oxide–semiconductor ~CMOS! high-voltage technology used, favor the absorption of red and infrared photons at the depletion region. The detection probability rapidly increases with excess bias ...